| 摘要 |
<p>The invention provides a semiconductor device for use in a light valve device, and a processor fabricating the same. The semiconductor device comprises a support substrate (1), a semiconductor thin film (5,6,7) on the support substrate, a switching transistor (4) having a channel region (7) formed in the semiconductor thin film and a main gate electrode (9) for controlling the channel region, and an electrode (3) electrically connected to the switching transistor for energisation by the switching transistor. A light-shielding thin film (11) is disposed on the side of the channel region opposite the main gate electrode, being separated from the channel region by an insulating film (10). In the process for fabricating the said conductor device, the light-shielding thin film, the insulating film and the semi-conductor thin film are laminated on the support substrate and are selectively etched to form a desired light-shielding thin film pattern. Then, the switching transistor and the electrode are formed subsequently. <IMAGE></p> |
