| 发明名称 |
Method for producing a luminous element of III-group nitride |
| 摘要 |
Disclosure is a process for producing a luminous element of III-group nitride semiconductor having a crystal layer (AlxGa1-x)1-yInyN (0</=x</=1, 0</=y</=1) to which a II-group element is added, comprising the steps of forming a crystal layer (AlxGa1-x)1-yInyN (0</=x</=1, 0</=y</=1) to which a II-group element is added; irradiating a low energy electron beam onto a topmost surface of the crystal layer to reform only the crystal layer; forming a thin film for absorbing optical energy on the topmost surface of the crystal layer; and pulse-heating the thin film for absorbing optical energy by heating means to reform only the crystal layer, thereby to produce a bluish green, blue or UV light emitting diode or a semiconductor laser diode with a high precision color purity.
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| 申请公布号 |
US5496766(A) |
申请公布日期 |
1996.03.05 |
| 申请号 |
US19950411467 |
申请日期 |
1995.03.28 |
| 申请人 |
PIONEER ELECTRONIC CORPORATION |
发明人 |
AMANO, HIROSHI;AKASAKI, ISAMU;TANAKA, TOSHIYUKI;TOHMA, TERUO;MANABE, KATSUHIDE |
| 分类号 |
H01L33/12;H01L33/32;H01L33/40;H01S5/00;H01S5/323;(IPC1-7):H01L21/20 |
主分类号 |
H01L33/12 |
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