发明名称 Method and apparatus for controlling ion implantation unit for early detection of ion implantation error
摘要 In controlling an ion implantation unit, a dose of ions is calculated for every lot, and it is determined whether or not the dose D of ions is within an allowable range. When the dose of ions is within the allowable range, the ion implantation unit is operated for the next lot. When the dose of ions is not within the allowable range, the ion implantation unit is stopped.
申请公布号 US5496592(A) 申请公布日期 1996.03.05
申请号 US19940358594 申请日期 1994.12.14
申请人 NEC CORPORATION 发明人 SAITO, YOSHIYUKI
分类号 H01L21/265;C23C14/48;C23C14/54;(IPC1-7):C23C14/00 主分类号 H01L21/265
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