| 发明名称 |
GaAs MIS device |
| 摘要 |
A combination of a semiconductor region essentially consisting of AlxGa1-xAs (0</=x</=1), an insulating film formed on the surface of the semiconductor region and essentially consisting of GaAsxPyOz (w, y, z>0), and a passivation film formed on the insulating film and made of an insulating material different from the insulating film. The laminated insulating film has an extremely low leakage current. An excellent MISFET can be realized by forming a gate electrode on the surface of the laminated insulating film.
|
| 申请公布号 |
US5497024(A) |
申请公布日期 |
1996.03.05 |
| 申请号 |
US19940223501 |
申请日期 |
1994.04.05 |
| 申请人 |
ASAHI KOGYOSHA CO., LTD.;HATTORI, KAZUO;FUJITSU LIMITED |
发明人 |
SHIBUYA, AKIRA;HATTORI, KAZUO;OZEKI, MASASHI |
| 分类号 |
H01L21/316;H01L21/28;H01L21/31;H01L21/314;H01L21/336;H01L21/338;H01L23/31;H01L29/51;H01L29/78;H01L29/812;(IPC1-7):H01L23/58;H01L29/76 |
主分类号 |
H01L21/316 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
