| 摘要 |
For manufacturing an insulation trench in a SOI substrate wherein logic components and high-voltage power components are integrated, a trench extending down onto the insulating layer of the SOI substrate is etched. By providing the sidewalls of the trench with an occupation layer containing a dopant and by drive-out from the occupation layer, diffusion regions neighboring the trench are produced. After complete removal of the occupation layer, a silicon layer is produced and an insulation structure is formed in the trench by thermal oxidation.
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