Method of selectively growing Si epitaxial film

摘要

In a method of selectively growing an Si epitaxial film, a gas consisting of not less than one type of a gas containing at least silane gas is used as a source gas. A substrate obtained by partially forming an insulating film pattern on a single-crystal Si substrate is heated to a predetermined temperature in a vacuum. An Si epitaxial film is grown on exposed single-crystal Si except for the insulating film pattern. Intermittent irradiation by vacuum ultraviolet light on the heated substrate is performed at predetermined time intervals.