| 摘要 |
A Novel method of making a semiconductor device (e.g., a HBT) is disclosed. A semiconductor body that comprises bulk semiconductor material and epitaxial semiconductor material on the bulk material is processed by carrying out a first sequence of processing steps on the epitaxial material. The sequence comprises forming at least first and second contact means on the epitaxial material. The resulting intermediate body is mounted, epitaxial material down, on a carrier body (e.g., a Si wafer with integrated circuitry thereon), such that the first and second contact means are electrically connected to, respectively, third and fourth contact means on the carrier body. Mounting is accomplished, exemplarily, by means of anisotropically conductive adhesive means. Subsequent to mounting of the intermediate body on the carrier body, a second sequence of processing steps is carried out on the intermediate body. The second sequence comprises removing, in at least a portion of the mounted intermediate body, essentially all bulk semiconductor material. The inventive method can be used to produce, for instance, a very fast HBT of novel geometry.
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