| 摘要 |
PURPOSE: To provide a method for producing chalcopyrite thin films which have a good adhesion property to lower electrodes, are easily controlled in compsn. and have good crystallinity. CONSTITUTION: A substrate 3 is heated from its front surface at the time of depositing the semiconductor thin films having the chalcopyrite structure on the substrate 3. The substrate temp. is suppressed to <=500 deg.C by a substrate heater 2 from the rear side of the substrate and further, the substrate surface temp. is kept at >=500 deg.C by heating the substrate with an IR heater 15, an IR laser 16, etc., from the front surface side of the substrate, by which the semiconductor thin films having the chalcopyrite structure having the excellent crystallinity are formed without generating distortion in the substrate. The ratios of the cross diffusion between the group I elements and between the group III and VI elements are controlled while the substrate temp. is controlled by changing the heating temp. linearly or stepwise from the front surface side of the substrate in these thin films. At this time, a dielectric substance or metal coated with metal having the value approximate to the coefft. of thermal expansion of the chalcopyrite thin films is used for the substrate. |
