发明名称 |
Highly producible magnetoresistive RAM process |
摘要 |
A process for forming a magnetoresistive bit and an interconnection to an underlying component forms a pattern in an amorphous dielectric overlying the magnetic materials. Portions of the magnetic materials are removed to form a bit having a smooth bit edge profile by ion milling. The bit has a bit end located over the underlying component. A second amorphous dielectric layer is deposited and etched at the bit end to form a via at the underlying component. Conventional first metal is used to form the interconnection.
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申请公布号 |
US5496759(A) |
申请公布日期 |
1996.03.05 |
申请号 |
US19940365852 |
申请日期 |
1994.12.29 |
申请人 |
HONEYWELL INC. |
发明人 |
YUE, JERRY;HURST, ALLAN T.;YEH, TANGSHIUN;CHEN, HUANG-JOUNG |
分类号 |
H01L27/16;H01L43/12;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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