发明名称 Method of manufacturing polycrystalline silicon thin film
摘要 In the first laser beam radiation, a laser beam having a predetermined energy density is scanned on each of predetermined unit irradiated regions at a scanning pitch smaller than the beam size, and in the second laser beam radiation, a laser beam having an energy density lower than that of the laser beam of the first radiation is scanned at a scanning pitch smaller than the beam size on each of unit irradiated regions different from those of the first laser beam radiation.
申请公布号 US5496768(A) 申请公布日期 1996.03.05
申请号 US19940344502 申请日期 1994.11.23
申请人 CASIO COMPUTER CO., LTD. 发明人 KUDO, TOSHIO
分类号 H01L21/20;(IPC1-7):H01L21/268;C30B1/00 主分类号 H01L21/20
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