| 摘要 |
PURPOSE:To improve the characteristics such as optical sensitivity and response speed,by providing a heterogeneous part in potential distribution in a base or in a gate channel at a specified period, and controlling the potential of a current by the potential of the junction interface of Schottky electrodes. CONSTITUTION:From the surface of a Schottky gate SIPT, light having a wavelength, whose energy is larger than the band gap of a semiconductor, is iuputted. Its penetrating depth is about the thickness of high resistance regions 502-504. Then pairs of electrodes and holes are generated in the high resistance regions. An electron 522 flows into an n<+> drain region by an electric field. A hole 523 is stored in a Schottky junction plane, where the potential is the lowest. By the stored holes, the potentials at the Schottky junction plane and a gate point G* are lowered. The electrons are injected from an n<+> source region 501 through a channel region 503. A current, which is obtained amplifying a light signal, flows. The high resistance regions are held between the n<+> source region and the gate and between n<+> drain regions and the gate. The junction area of the gate can be reduced. Therefore a high speed can be realized. |
