| 摘要 |
The amplifier includes complementary transistors formed by multi-layering a Gallium Arsenide substrate (10) using Molecular Beam Epitaxy. Two structures are formed along the slab, a multiple N-type FET structure (11) and a multiple P-type FET structure (12). The P-type FET is made up of three FET transistors in parallel (13,14,16). The design is such that the transconductance of the P-channel FET is equal to that of the N-channel, and that the input impedance of the two channels are equal.
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