Halbleiterbauelement mit umgekehrt T-förmiger Gatestruktur,申请号DE19883813665-传众专利搜索

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发明名称	Halbleiterbauelement mit umgekehrt T-förmiger Gatestruktur
摘要
申请公布号	DE3813665(C2)	申请公布日期	1996.02.29
申请号	DE19883813665	申请日期	1988.04.22
申请人	HITACHI, LTD., TOKIO/TOKYO, JP	发明人	IZAWA, RYUICHI, KOKUBUNJI, TOKIO/TOKYO, JP;KURE, TOKUO, KOKUBUNJI, TOKIO/TOKYO, JP;IIJIMA, SHIMPEI, AKISHIMA, TOKIO/TOKYO, JP;TAKEDA, EIJI, KOGANEI, TOKIO/TOKYO, JP;IGURA, YASUO, HACHIOJI, TOKIO/TOKYO, JP;HAMADA, AKEMI, TOKOROZAWA, SAITAMA, JP;HIRAIWA, ATSUSHI, KODAIRA, TOKIO/TOKYO, JP
分类号	H01L21/336;H01L29/423;H01L29/49;(IPC1-7):H01L29/78;H01L27/08;H01L21/265	主分类号	H01L21/336
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