| 摘要 |
A single piece, high purity, full density semiconductor wafer fixture (20) for holding a multiplicity of wafers (27) and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The method for making such an article comprises shaping a substrate, e.g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.
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