| 发明名称 |
HIGH-VOLTAGE LDD-MOSFET WITH INCREASED BREAKDOWN VOLTAGE AND METHOD OF FABRICATION |
| 摘要 |
In a high-voltage MOS transistor that utilizes a lightly-doped drain region to isolate a heavily-doped drain region from the substrate, the reverse bias which can be applied across the drain-to-substrate junction of the transistor is increased by reducing the width of the heavily-doped drain region. |
| 申请公布号 |
WO9605618(A1) |
申请公布日期 |
1996.02.22 |
| 申请号 |
WO1995US10207 |
申请日期 |
1995.08.10 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BERGEMONT, ALBERT, M. |
| 分类号 |
H01L21/336;H01L27/092;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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