发明名称 |
Ceramic composition for circuit substrat and its fabrication |
摘要 |
<p>The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050 DEG C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same. A glass is employed as row material, of which softening point is 850 to 1,100 DEG C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO2-B2O3-R2O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively. <MATH></p> |
申请公布号 |
EP0697725(A2) |
申请公布日期 |
1996.02.21 |
申请号 |
EP19950111855 |
申请日期 |
1995.07.27 |
申请人 |
HITACHI, LTD. |
发明人 |
TANEI, HIRAYOSHI;IWANAGA, SHOICHI;OKAMOTO, MASAHIDE;NAKAMURA, MASATO;MORITA, KOUSAKU;ISHIHARA, SHOUSAKU;KOBAYASHI, FUMIYUKI;TAGAMI, FUMIKAZU;SENGOKU, NORIO;FUJITA, TSUYOSHI |
分类号 |
C03C3/089;C03C8/16;C03C14/00;C03C17/06;H01L21/48;H01L23/15;H05K1/03;(IPC1-7):H01L23/15 |
主分类号 |
C03C3/089 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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