Memories monitoring method for EEPROM and battery buffered memory

摘要

The method involves using a memory cell, e.g. a flip-flop, outside of the memory package. The flip-flop is used as a marker with a lower overrun threshold than the memory to be monitored. During the monitoring the marker content is evaluated for fault recognition. After a voltage invasion the marker assumes a preferred value. During initial operation the marker can receive a value different from the preferred value, which is lost on a fault appearance. A fault is recognised, when the marker content is different from the initialised value. The marker may be a memory cell supplied with voltage via an ohmic resistance.