| 摘要 |
A cobalt disilicide layer is formed on a silicon layer through an etching of natural oxide grown on the silicon layer, a deposition of a cobalt layer by using a chemical vapor deposition, a conversion of the cobalt layer on the silicon layer to a cobalt suicide layer mainly composed of CoSi, an etching of the remaining cobalt layer and a conversion of the cobalt silicide layer to a cobalt disilicide layer, and the etching of the natural oxide to the conversion to the cobalt silicide are carried out in a vacuum ambience without breakage of the vacuum so that the cobalt disilicide does not penetrate into the silicon layer. |
