发明名称 |
High aspect ratio low resistivity lines/vias by surface diffusion |
摘要 |
<p>A structure and method for fabricating circuits which use field effect transistors (FETs), bipolar transistors, or BiCMOS (combined Bipolar/Complementary Metal Oxide Silicon structures), uses low temperature germanium gas flow to affect metals and alloys deposited in high aspect ratio structures including lines and vias. By using a germanium gas flow, germanium (Ge) will be introduced in a surface reaction which prevents voids and side seams and which also provides a passivating layer of CuGe. If a hard cap is needed for surface passivation or a wear-resistance application, the GeH4 gas followed by WF6 can be used to produce an in-situ hard cap of WxGey. Further, high aspect ratio vias/lines (aspect ratio of 3 or more) can be filled by utilizing low pressures and high temperatures (i.e., below 450 DEG C) without degrading the underlying metals. <MATH> <MATH></p> |
申请公布号 |
EP0697730(A2) |
申请公布日期 |
1996.02.21 |
申请号 |
EP19950110478 |
申请日期 |
1995.07.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JOSHI, RAJIV VASANT;TEJWANI, MANU JAMNADAS;SRIKRISHNAN, KRIS VENKATRAMAN |
分类号 |
H01L21/28;H01L21/203;H01L21/205;H01L21/3205;H01L21/321;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L23/532 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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