发明名称 PRODUCTION OF DIELECTRIC THIN FILM AND DEVICE THEREFOR
摘要 PURPOSE:To stably and homogeneously produce a dielectric thin film by depositing a perovskite-structure double oxide compd. on a substrate heated by a substrate heater and periodically heating the surface of the coating film with another heat source. CONSTITUTION:Plural substrates 2 of MgO, etc., are set on a soaking plate 4 as a substrate holder of P-BN, etc., provided with a heater 1 in a reaction chamber contg. an oxygen atmosphere, a raw material target 3 is magnetron- sputtered to deposit a perovskite-structure double oxide compd,. coating film consisting of ABO3(A is Pb Ba, Sr or La, and B is Ti or Zr) on the substrates kept at a specified temp., and a dielectric thin film is obtained. An additional heating sheet 5 is arranged between the substrate 2 and target 3 in addition to the heater 1 to periodically heat the coating film from the surface side. As a result, a stage wherein the sputtered particles flying to the substrate are deposited and a stage for improving and stabilizing the crystallinity by the additional heating are repeated.
申请公布号 JPH0849061(A) 申请公布日期 1996.02.20
申请号 JP19950131565 申请日期 1995.05.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KOMAKI KAZUKI;HAYASHI SHIGENORI;KAMATA TAKESHI;KITAGAWA MASATOSHI;TORII HIDEO;TAKAYAMA RYOICHI;HIRAO TAKASHI
分类号 C01G23/00;C01G25/00;C23C14/08;C23C14/24;H01L21/314;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108 主分类号 C01G23/00
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