| 摘要 |
<p>PURPOSE:To remove the influence of the absorbed moisture of a silicon oxide film containing phosphor, and anneal a semiconductor activating layer by an XeCl excimer laser. CONSTITUTION:In the manufacture of a film transistor, which stacks a semiconductor active layer 4 and a silicon oxide film 5 containing phosphor on a substrate 1, and crystallizes them by applying an excimer laser beam 20 to a part of the semiconductor active layer from the side of a board thereby annealing them, and forms an ohmic contact part 7 by diffusing impurities from the silicon oxide film, the board is heated in dry nitrogen or dry inert gas atmosphere prior to the annealing, and then it is irradiated with an excimer laser beam in the same atmosphere without being exposed to air. Moreover, an XeCl excimer laser beam is used for the excimer laser beam, and a glass board having transmissivity of 70% or more to the laser beam is used for the board.</p> |
