| 摘要 |
A transistor circuit apparatus comprises a MOS transistor to be improved, for preventing an avalanche breakdown, the MOS transistor being connected in a channel conductor path provided between one of power supply terminals and a terminal of an output, a separate circuit connected to the output terminal and driven by a voltage from a separate power supply, and a pull-down unit including a second transistor connected between one of said power supply terminals and a back gate of the MOS transistor, the second transistor being turned on with an output node of the separate circuit used as power supply when the MOS transistor remains at a ground potential level with no power supply potential supplied, thereby pulling down the potential level of a back gate node of the MOS transistor to the level of one of the power supply terminals.
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