| 摘要 |
PURPOSE:To form an upper dielectric thin-film at a lower forming temperature, compared to the case of formation by the simple substance of an upper dielectric thin-film, by forming a dielectric thin-film of a lower sufficiently-crystalizable temperature as the lower layer compared to the upper layer, and forming the upper dielectric film on it. CONSTITUTION:An Si thermal oxidation film 2 is formed on the surface of an n-type silicon substrate 1, and on it a Ti film 3 and a Pt film 4 are formed successively. On it an STO film 5 is formed at a substrate temperature 400 deg.C. On it a BST film 6 is formed at a substrate temperature 300 deg.C. Since the lower layer is not an electrode but an oxide containing BST and is ion crystals being the same as STO, core generation and growth on the surface of the STO film becomes easy, and it becomes possible to form an upper layer dielectric thin-film at a lower temperature, compared to the case of formation a metal electrode. |
