X-RAY MASK AND MANUFACTURING METHOD AND DEVICE THEREOF

摘要

PURPOSE:To enable an X-ray absorber pattern of an X-ray mask to be accurately formed by a method wherein an etching mask specified in thickness basing on the thickness and required pattern accuracy of the X-ray absorber is disposed. CONSTITUTION:An etching mask 5 is arranged over an X-ray absorber 4, and the X-ray absorber 4 is patterned by the use of a resist pattern 6'. At this point, an etching mask 5 of thickness dl shown in a formula (etching selection ratio of an etching mask to X-ray absorber is represented by z, thickness of etching mask is de, thickness of X-ray absorber is dx, required pattern size of X-ray absorber is represented by dl, and required pattern accuracy of X-ray absorber is a (%)) is used. By this setup, an X-ray absorber can be etched high in dimensional accuracy, and an X-ray mask of high accuracy can be obtained high in yield.