| 摘要 |
<p>PURPOSE:To unnecessitate a dedicated process to form a pixel electrode for an active matrix type liquid crystal display device. CONSTITUTION:Enough transmittance can be obtd. even when a pixel electrode 15 is formed from a laminated body of a Si layer 4a and a silicide layer 7. Therefore, the pixel electrode 15 is formed by using the Si layer 4a and the silicide layer 7 formed on the Si layer 4a. The Si layer 4a is simultaneously formed when a Si layer 4 to constitute a part of a thin film transistor 14 is formed In this case, the Si layer 4a to form the pixel electrode 15 can be simultaneously formed with the Si layer 4 to constitute a part of the thin film transistor 14. Moreover, when a metal layer to form a source electrode 12 and a drain electrode 13 for the thin film transistor 14 is produced by forming a film of such metal that can be changed into silicide, the silicide layer 7 can be formed on the surface of the Si layer 4a for the pixel electrode 15 at the same time.</p> |
