Memory addressing method and apparatus therefor

摘要

A memory addressing method and apparatus therefor having a pair of cell blocks is characterized in that the pair of cell blocks are alternately column-addressed in such a manner that the column line of one cell block is pre-charged while the column line of the other cell block is addressed, and that subsequently, the pre-charged column line of the other cell block is addressed while the next column line of the one cell block is pre-charged. Therefore, the memory device wherein a plurality of cell blocks are alternately addressed can achieve an approximately doubled speed of operation.