Fluorine doped silicon oxide process

摘要

The present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ne and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl, aryl or benzylic groups, or CxH2x when one or more of R1, R2 or R3 is connected to R4, R5 or R6 through a bridging group CyH2y; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6 and R7 is independently H, F, CzH2z+1 where z is 1-6 or CrHsFt where r is 1-6, s is (2r+1-t); t is 1 to (2r+1) . The present invention is also the film formed by that process and several novel source materials used in the process.