发明名称 DICING METHOD FOR SEMICONDUCTOR WAFER THAT AVOIDS FORMATION OF SLIVER FROM CUT TEST PAD AND DIE THAT ARISES BY DICING OPERATION
摘要 <p>PURPOSE: To prevent a sliver from being formed from a cut test pad by cutting a wafer partially inside along a sheet by using a rotary cutter and forming a groove to be cut through a test pad. CONSTITUTION: A cutter 54 has a cutting edge in an inclined shape with two inclined side surfaces 54a and 54b. The cutter 54 cuts a wafer 40 only partially toward the inside. Then, a groove with two angles or an inclined edge is formed in the wafer 40. When the cutter 54 passes through the test pad 52 is cut, a sliver generated owing to the cutting of the test pad 52 is all compressed into a cutting area and is sheared by the inclined side surfaces 54a and 54b of the cutter 54.</p>
申请公布号 JPH0851089(A) 申请公布日期 1996.02.20
申请号 JP19950113209 申请日期 1995.05.11
申请人 LSI LOGIC CORP 发明人 NANBUARU KARINAJI
分类号 B24B27/06;H01L21/301;(IPC1-7):H01L21/301 主分类号 B24B27/06
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