| 摘要 |
PURPOSE:To perform generation of plasma without making the sharp change of the conditions on plasma generation and film growth by introducing microwave energy into a film growth space in advance, and introducing RF energy succeedingly. CONSTITUTION:First, second, and third applicators 104a, 104b, and 104c for introducing microwave energy are attached, respectively, to the sidewalls of a film growth space 101a, 101b, and 101c, in the shifting direction of a band- shaped member 1. Moreover, 102a, 102b, and 102c are metallic bias bars being RF bias application means. Smooth and stable shifting from plasma generation to film growth process becomes possible without expensive incidental facilities by adding microwave power thereby applying RF power, and abnormal discharge such as spark, etc., which were easy to occur at plasma generation in conventional method, can be prevented, so the effective operation time of a film growth device can be increased. |
