| 摘要 |
<p>PURPOSE:To apply a phase shift mask when a very fine pattern region of a device is exposed to light and a usual transmitting mask when the rest of the device is exposed to light in a reduced projection exposure method when a device pattern is formed. CONSTITUTION:One or two different masks having a phase shift mask region and a light transmitting-type mask region are laid on a specimen at the same position overlapping each other, and then the specimen is subjected to a light exposure process. By the above-mentioned method, the very fine pattern region and the circuit pattern region of the specimen can be exposed to light at the same time. By this setup, a device with a very fine pattern can be easily patterned and easily formed high in throughput and profitability.</p> |
