| 摘要 |
PURPOSE:To provide a high-performance device high in rectification and high in open circuit voltage forming a p-type semiconductor film after treat the surface of a transparent oxide electrode by oxidizing plasma. CONSTITUTION:A substrcte 10 fitted with a transparent electrode consisting of a tin oxide 11 is carried into an oxidizing plasma processing chamber, and the surface is treated by oxidizing plasma for one minute, with 100cc/min. in oxygen, 0.1Torr in pressure, 100 deg.C in temperatue, and 0.5w/cm<2> in high frequency power. Next, in a dope film growth chamber, disilane, diborane, methane, and hydrogen are introduced at a rate of 5/0.11/3/500, and pressure of 0.2Torr, temperature of 150 deg.C, and high frequency power of 0.1w/cm<2> are applied to form a p-type amorphous silicon carbide film 12. Furthermore, a film growth chamber, a substantially intrinsic i-type amorphous semiconductor layer 13 is formed, and in a dope layer growth chamber, an n-type amorphous semiconductor layer 14 is formed. Lastly, a silver electrode 15 is made by vacuum deposition. Hereby, extremely high values can be obtained such as that the voltage at open end is 0.93V and that the curve factor is 0.76. |
