发明名称 |
Method of dry etching platinum using sulfur containing gas |
摘要 |
A method of manufacturing a semiconductor device, where on top of a substrate having already-completed circuit elements and wiring, etc., an insulation underlayer a, Pt layer for a bottom electrode, a dielectric film and a Pt layer for a top electrode are shaped. A top electrode, capacitance insulation film and bottom electrode are formed by etching the Pt layer for the top electrode or the Pt layer for the bottom electrode using an etching gas contained a S component while composing a Pt and S compound. Alternatively the Pt and S compound can be composed first, and then the compound can be etched.
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申请公布号 |
US5492855(A) |
申请公布日期 |
1996.02.20 |
申请号 |
US19940364115 |
申请日期 |
1994.12.27 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
MATSUMOTO, SHOJI;NIKOU, HIDEO;NAKAGAWA, SATOSHI |
分类号 |
H01L21/02;H01L21/3213;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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