SOI TRANSISTOR WITH SELF-MATCHING BASE BODY CONTACT AND ITS PREPARATION

摘要

PURPOSE: To form a body contact without requiring penetration through a source, as required by conventional technology, while minimizing increase of the area by fabricating an SOI transistor having a self-aligned body contact passing through the extension to a gate. CONSTITUTION: An initial opening is defined by protruding a source 116 and a drain 114 and a conformal layer 120 is formed thereon. It is then etched to form side walls defining an aperture and a contact aperture is etched using these side walls to define a side wall supporting member for supporting an insulation side wall thus isolating a collector electrode from the gate, source and drain.