| 发明名称 |
Stacked capacitor process using silicon nodules |
| 摘要 |
A technique for making a MOST capacitor for use in a DRAM cell utilizes silicon nodules after metal etching. The silicon nodules are used as a mask to selectively form deep grooves in a polysilicon electrode of the capacitor.
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| 申请公布号 |
US5492848(A) |
申请公布日期 |
1996.02.20 |
| 申请号 |
US19940214593 |
申请日期 |
1994.03.18 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LUR, WATER;WU, JIUNN-YUAN;HUANG, CHENG-HEN |
| 分类号 |
H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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