| 摘要 |
<p>PURPOSE:To control the film thickness and the edge shape of a trimming X-ray absorber pattern by a method wherein first and second deposition films are formed as the mold pattern for selective growth of an X-ray absorber material, and after the metal which becomes an X-ray absorber has been selectively grown, the first and second deposition films are removed. CONSTITUTION:A Ti layer 3, an SiO2 film 4 and an SiN film 5 are formed successively on the membrane film 2 on the surface of a silicon substrate 1. Then, a resist film 6 is formed, and pattern drawing and development are conducted, an anisotropic etching is conducted using the resist film 6 as an etching mask, an isotropic etching treatment is conducted, and SiO2/SiN patterns 11 and 12, to be used for selective growth of W which becomes X-ray absorbing material, are formed. Besides, pertaining to the etching width of the SiO2 film 4, the prescribed width from pattern edge is removed. Then, a W-film, which becomes X-ray absorber material, is grown. Then, the SiO2 film 4 and the SiN film 5 are removed by a lift-off method.</p> |
