| 摘要 |
Conductive bumps (24) are formed on a semiconductor device (10) by applying or depositing an imageable conductive layer (18) over the device and in contact with I/O pads of a final metallization layer (14). The imageable conductive material is formed of an imageable acrylic resin system filled with conductive particles. In one embodiment, a mask (20) having a pattern of transparent material (21) corresponding to the desired patterned of conductive bumps is used to expose the imageable conductive layer to radiation (23). The imageable conductive layer is then developed, thereby removing unexposed portions of the layer and leaving a plurality of conductive bumps (24) on the I/O pads of the device. Rather than using a negatively imaged conductive layer, a positive resin could be used in formulating the imageable conductive material.
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