发明名称 Semiconductor memory with edge transition detection pulse disable
摘要 A system and method are provided for disabling the edge transition detection circuit during the flash clear cycle, thereby preventing the generation of an edge transition detection pulse. In a preferred embodiment of the invention, the edge transition detection circuit is connected to the flash clear complement circuitry through a logic gate. During the flash clear cycle, flash clear true, FCT, is pulled high, flash clear complement, FCc, is pulled low and inverted to drive a portion of the ETD circuitry high, thereby preventing generation of an ETD pulse during the flash clear cycle.
申请公布号 US5493537(A) 申请公布日期 1996.02.20
申请号 US19940202830 申请日期 1994.02.28
申请人 SGS-THOMSON MICROELECTRONICS, INC. 发明人 MCCLURE, DAVID C.
分类号 G11C7/20;G11C7/22;G11C8/18;(IPC1-7):G11C8/00 主分类号 G11C7/20
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