| 摘要 |
PURPOSE:To obtain a semiconductor device, in which the film thickness of a dielectric film is equalized and a contact hole having a smaller diameter can be formed. CONSTITUTION:A semiconductor device comprises a semiconductor substrate 1, an inter-layer insulating film 6 formed onto the semiconductor substrate 1, a plasma nitride film 12 formed onto the inter-layer insulating film 6, a contact hole 13 penetrated into the inter-layer insulating film 6 and the plasma nitride film 12 and shaped up to the semiconductor substrate 1, a conductor film 14 buried into the contact hole 13 while being formed onto the plasma nitride film 12, and a dielectric film 15, in which a nitride film 15b and SiO2 15a are laminated successively onto the dielectric film 14. |
