发明名称 GATE DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCH
摘要 PURPOSE:To obtain a gate drive circuit for semiconductor switch, e.g. thyristor, in the efficiency is enhanced by allowing power supply to the gate drive circuits of a plurality of semiconductor switches connected in series thereby reducing power loss. CONSTITUTION:The gate drive circuit for semiconductor switch comprises a series circuit of capacitors 6, 7 connected in parallel with the snubber capacitor 4 of a semiconductor switch 1, and an energy collection circuit 9 for charging a storage capacitor 8, serving as a power supply for a gate drive circuit 10 comprising the series circuit of the capacitors 6, 7, with a low voltage.
申请公布号 JPH0851770(A) 申请公布日期 1996.02.20
申请号 JP19940187283 申请日期 1994.08.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 OKAYAMA HIDEO;TSUCHIYA TAICHIRO;KIMATA MASAHIRO
分类号 H02M1/06;H02M1/08;H02M7/483 主分类号 H02M1/06
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