| 摘要 |
PURPOSE:To provide a semiconductor device, which can properly avoid the deterioration of the quality of a gate film and the fluctuation of the characteristics of a transistor and a manufacturing method thereof. CONSTITUTION:A semiconductor device has a gate insulating layer 38a formed onto a semiconductor substrate 11, a first conductive layer 14a formed onto the gate insulating layer, an impurity diffusion layer 33 shaped onto the surface of the semiconductor substrate 11, and second conductive layers 15a, 15b formed so as to be laminated on the surfaces of the semiconductor substrate 11, in which part of the gate insulating layer 38a is removed and exposed, and the first conductive layer 14a so that the second conductive layers 15a, 15b are connected to the impurity diffusion layer 33 through a buried diffusion layer. |
