发明名称 |
Substrates for the growth of 3C-silicon carbide |
摘要 |
A substrate for the growth of monocrystalline beta -SiC is formed by providing a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within +/-5% of the lattice parameter of 6H alpha -SiC in the basal plane and growing a body of monocrystalline cubic material on the surface to provide a planar cubic material surface that is without grain boundaries, subgrain boundaries, double positioning boundaries, and pits. The cubic material, for example TiC, ZrC, HfC, or TiN, has a rock salt structure and a lattice parameter within +/-5% of the lattice parameter of beta -SiC. Monocrystalline beta -SiC can be nucleated and grown on the surface of the cubic material.
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申请公布号 |
US5492752(A) |
申请公布日期 |
1996.02.20 |
申请号 |
US19930083903 |
申请日期 |
1993.06.25 |
申请人 |
OREGON GRADUATE INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
PARSONS, JAMES D.;CHADDHA, AJAY K.;CHEN, HER S.;WU, JIN |
分类号 |
H01L21/205;C30B25/02;H01L21/20;(IPC1-7):B32B15/04 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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