| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the undesirable leakage of a surface current in a high- voltage power integrated circuit. SOLUTION: A polysilicon field ring structure has a high-voltage region 40 add a low-voltage region 41, and at the same time is used to eliminate the leakage of an undesirable surface current in a power chip 20 that is formed into an integrated circuit being surrounded by a plastic housing 81. All P-type diffusion regions that are not biased to the grounding potential is surrounded by rings 70 and 71 that are biased to a supply power supply potential, and all N-type diffusion regions that are not biased to the supply power supply potential are surrounded by a ring that is biased to the ground potential. |
