SEMICONDUCTOR MEMORY DEVICE AND DC CURRENT FAULT DETECTING METHOD FOR MEMORY CELL

摘要

PURPOSE:To obtain a semiconductor memory device capable of detecting details of DC current faults of memory cells. CONSTITUTION:Memory cell power supply wirings 400 of memory mats 210 are individualized at every memory mat and these memory cell power supply wirings are separated from a power supply line 403 utilized by the whole of a semiconductor memory device and the wirings 400 are selectively connected to a testing power supply wiring 401 for a memory cell current measurement. The content of DC current faults in a memory block connected to the power supply wiring 401 can be analyzed in detail by measuring currents at the time of impressing various voltages VMCC to the power supply wiring 401. Thus, defection reliefs can effectively be applied to memory cells based on the DC current faults of memory cells.