| 摘要 |
PURPOSE: To increase structural stability of cobalt silicide/germanide in high- temperature annealing by forming a mixture of cobalt, white gold and element selected from Vb group in the periodic table on a semiconductor substrate, and forming a thin film including a reactant from reaction between the mixture and the substrate. CONSTITUTION: A CMOS includes a monocrystal silicon substrate 11 including an insulating layer 12. A gate region includes a gate oxide film 14, a polycrystal silicon film 15 and a thin film spacer 13. Next, the mixture of cobalt, white gold and an element selected from Vb group in the periodic table, i.e., cobalt- alloy thin film layer 38 is attached to the insulating layer 12, a source region 16, a drain region 17 and the gate region. Next, the CMOS device is annealed by an annealing process at a temperature lower than 750 deg.C. By this arrangement, the cobalt alloy layer reacts with the substrate 11 and the polycrystal silicon gate 15, to form source contact 68, drain contact 69 and gate 70 contact of cobalt silicide white gold. |
