GAAS SEMICONDUCTOR POWER ELEMENT OPERATIVE ON LOW POWER SOURCE VOLTAGE AND MANUFACTURE THEREOF

摘要

PURPOSE: To make it possible to prevent flowing of a parasitic carrier in an interface between a substrate and a buffer layer into a channel layer. CONSTITUTION: First GaAs buffer layer 10A without being doped is formed on a semi-insulation GaAs substrate 70, a superlattice layer 80 is formed on the first GaAs buffer layer 10A, the second GaAs buffer layer 10B made of the same material as the first GaAs buffer layer is formed on the superlattice layer 80 without being doped, a channel layer 20 is formed on the second GaAs buffer layer 10B, and a surface protection film 30 is formed on the channel layer 20.