| 摘要 |
PURPOSE:To inhibit the silicide reaction in a subsequent high temperature. CONSTITUTION:After an insulation film 2 is formed on the surface of a substrate 1 in a first step, a contact hole 3 is produced on the insulation film 2 by lithography and etching. In a second step, a thin silicide film 4 comprising at least one kind of titanium silicide, molybdenum silicide, platinum silicide, nickel silicide, cobalt silicide, palladium silicide, and niobium silicide is formed on the insulation film 2 in a condition of covering the interior of the contact hole 3. In a third step, a contact layer 5 is formed on the thin silicide film 4 in a condition of covering the surface of the thin silicide film 4 formed inside the contact hole 3. In a fourth step, a conductive material is buried via the thin silicide film 4 and the contact layer 5 inside the contact hole 3 to form an electrode 6a. |
