| 摘要 |
PROBLEM TO BE SOLVED: To provide a product containing a plurality of gate polysilicon thin- film transistors for reducing leakage current even if a relatively large reverse- gate bias is applied. SOLUTION: A plurality of gate polysilicon thin-film transistors 10 have three gates 12A, 12B, and 12C, which are located on gate channel regions 14A, 14B, and 14C, respectively. The channel regions are divided by a lightly-doped channel section 16. The transistor 10 is lightly doped, where sections 16A and 16B are 5×10<15> -2×10<19> (an injection dopant per cm<3> ). By reducing doping as compared with that by a conventional technique in a channel section among the gate channel regions, leakage current that greatly affects the ON current of a device can be decreased.
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