| 摘要 |
PURPOSE:To fabricate a semiconductor device in which the short channel effect is suppressed effectively, through a relatively simple fabrication process, even if a back bias is applied while enhancing the sub-threshold characteristics and the transistor characteristics, e.g. current drive capacity and durability. CONSTITUTION:A transistor 30 comprising a gate insulating film 25 covering the surface of a P-well 23 being applied with a back bias, a gate electrode 26 formed on the gate insulating film 25, N-type source-drain regions 24 formed on the surface of the P-well 23 on the opposite sides of the gate electrode 26, and P-type pocket regions 29 formed contiguously to the gate electrode side end parts of the source-drain region 24 is formed in the semiconductor device. In order to compensate for the threshold voltage rise of the transistor 30, N-type impurities, e.g. phoshorus ions, are implanted into the channel region on the surface of a well located below the gate electrode. This semiconductor device can be employed as a submicron transistor of 0.35mum or less for DRAM. |
