| 摘要 |
PURPOSE:To avoid oxide films produced by a burn-in test by a method wherein the surfaces of bump electrodes do not contain oxide films which are formed by the exposure to a high temperature atmosphere at the time of the burn-in test. CONSTITUTION:In appearance, a ball grid array(BGA) type semiconductor device is composed of a wiring board 1, a sealing unit 7 which is made of resin and formed on the main surface 1a side of the wiring board 1, bump electrodes 9 which are arranged into an array on the rear surface 1b side of the wiring board 1 and an insulating film 12 covering the side surfaces of the wiring board 1. In the finished product state, only thin oxide films exist on the surfaces of the bump electrodes 9 because the bump electrodes 9 are formed in a non-oxidizing atmosphere after a burn-in test. The oxide films which are formed on the surfaces of the bump electrodes 9 in an operational test and in a mounting process are natural oxide films and very thin. That is, as the bump electrodes 9 of the BGA type semiconductor device 10 are formed afrer the burn-in test, only the thin natural oxide films are formed on the surfaces of the formed bump electrodes 9 and thick oxide films which are formed by the burn-in test do not exist. |
