| 摘要 |
PURPOSE:To prevent the lowering of generating capacitance resulting from the electric resistance of a transparent electrode, and to enable the manufacture of an amorphous silicon solar cell having a large area by successively laminating a metallic electrode being formed onto a transparent substrate and having an opening section and a transparent conductive film, a (p) layer, an (i) layer, an (n) layer and a rear side electrode on the metallic electrode. CONSTITUTION:A material Al is evaporated on a glass board 1 as a surface-side metallic electrode 10, ITO and SnO2 are film-formed by using a reactive ion plating method or a reactive sputtering method in a transparent conductor 5 on the surface-side metallic electrode 10, and a (p) layer 3, an (i) layer 2 and an (n) layer are film-formed on the transparent conductor 5 through RF glow discharge plasma CVD. A rear-side metallic electrode 6 is shaped by evaporating Al. When three manufactured amorphous silicon solar cells are connected in series and load is bonded and solar rays are cast from the glass board 1 side, electrons and holes are generated in the (i) layer 2, and electrons supply power through the rear-side metallic electrode 6 from the (n) layer 4 and holes through the surface-side metallic electrode 10 from the (p) layer 3. |
